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Lithium-Drifted Silicon Detector with Segmented Contacts

IB-1863

PATENT APPLICATION SUMMARY:

This application describes a method and apparatus for creating both segmented and unsegmented radiation detectors which are readily fabricated and which can operate at room temperature. The devices include a metal contact layer, and an n-type blocking contact formed from a thin layer of amorphous semiconductor. In one embodiment the material beneath the n-type contact is n-type material, such as lithium compensated silicon that forms the active region of the device. The active layer has been compensated to a degree at which the device may be fully depleted at low bias voltages. A p-type blocking contact layer, or a p-type donor material can be formed beneath a second metal contact layer to complete the device structure. When the contacts to the device are segmented, the device is capable of position sensitive detection and spectroscopy of ionizing radiation, such as photons, electrons, and ions.

In one embodiment of the invention, the apparatus for detecting radiation comprises: (a) a substrate of crystalline semiconductor material having a p-n junction; (b) means for passivating the substrate of crystalline semiconductor material without adversely affecting the ability to form contacts on p and n junction portions of the crystalline semiconductor material; (c) a first and second metallic contact formed over the passivating means on said p and n junction portions of the crystalline semiconductor material.

 

STATUS:

  • Patent Application #7,060,523. Available for licensing or collaborative research.

REFERENCE NUMBER: IB-1863

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