MoS2 transistors with 1-nanometer gate lengths
(A) Schematic and (B) Cross-sectional TEM image of 1D2D-FET with a MoS2 channel, SWCNT gate and ZrO2 gate dielectric. (D) ID-VGS and (E) ID-VDS characteristics of a bilayer MoS2 channel SWCNT gated FET at VBS = 5 V. (F) ID-VGS characteristics at VDS = 1 V and varying VBS.
Demonstration of the shortest gate length transistor using a MoS2 channel and ~1 nm diameter single-walled carbon nanotube (SWCNT) gate.
Significance and Impact
~1 nm gate length transistor possible. Layered materials like MoS2 are potential channel materials at the sub-5-nm transistor scaling limit.
- Near ideal subthreshold swing ~65 mV/decade, On/Off current ratio ~106
- Effective channel length of ~3.9 nm in Off state and ~1 nm in On state
- MoS2 extension regions electrostatically doped n+ using Si back gate