Fabricating First Fully 2D Field-Effect Transistors
Field effect transistor comprised entirely of heterogeneously-stacked 2D materials including MoS2 channel, hexagonal-BN gate dielectric, and graphene electrodes.
Berkeley Lab fabricated the world’s first ‘fully 2D’ Field Effect Transistors (FETs) from monolayers of 2D materials held together by van der Waals bonding.
Significance and Impact
Unlike conventional FETs, the 2D version suffers no performance drop under high voltages and provides high electron mobility. This demonstrates the promise of using all-layered material for future highly-controllable electronic devices.
- Key transistor components are fabricated using dichalcogenide MoS2 (electron-carrying channel), hexagonol-BN (insulator), and graphene (source, drain, gate electrodes)
- All constituent materials are single crystals held together by van der Waals bonding
- Structure provides unique device architecture in which the thickness of each component is well defined without surface roughness; atomically-uniform thickness layers can be stacked on demand
- Van der Waals bonding avoids constraints of lattice parameter that limit growth and performance