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Direct growth of single crystalline III-V semiconductors on amorphous substrates

Direct growth of single crystalline III-V semiconductors on amorphous substratesSEM image of a single-crystalline Cal logo (top) along with a corresponding electron backscatter diffraction (EBSD) map showing the single crystal nature of the Cal logo (bottom) directly grown on amorphous SiO2 substrate.

Scientific Achievement
Development of a new growth method, templated liquid phase (TLP) crystal growth, for growing patterned single crystalline III-V’s on amorphous substrates.

Significance and Impact
TLP eliminates the need for a lattice-matched growth substrate, allowing for direct growth of high quality single-crystalline semiconductors with user-defined dimensions on any substrate; thus enabling a wide range of new electronic and optoelectronic applications.

Research Details

  • TLP growth carried out by heating patterned group III element capped by evaporated SiOx in the presence of group V gas
  • TLP grown InP films characterized via electron backscatter diffraction spectroscopy (EBSD) to verify single crystallinity
  • TLP grown InP transistors show high on/off ratios >105 and field effect mobilities of up to 675 cm2/V s
  • Demonstration of InP, GaP, and InSb growth show broad applicability of the TLP growth method to all III-V semiconductors in general

K. Chen, R. Kapadia, A. Harker, S. Desai, J. S. Kang, S. Chuang, M. Tosun, C. M. Sutter Fella, M. Tsang, Y. Zeng, D. Kiriya, J. Hazra, S. R. Madhvapathy, M. Hettick, Y.-Z. Chen, J. Mastandrea, M. Amani, S. Cabrini, Y.-L. Chueh, J. W. Ager III, D. C. Chrzan, A. Javey, Nature Communications, 7, 10502 (2016)