Direct growth of single crystalline III-V semiconductors on amorphous substrates
SEM image of a single-crystalline Cal logo (top) along with a corresponding electron backscatter diffraction (EBSD) map showing the single crystal nature of the Cal logo (bottom) directly grown on amorphous SiO2 substrate.
Development of a new growth method, templated liquid phase (TLP) crystal growth, for growing patterned single crystalline III-V’s on amorphous substrates.
Significance and Impact
TLP eliminates the need for a lattice-matched growth substrate, allowing for direct growth of high quality single-crystalline semiconductors with user-defined dimensions on any substrate; thus enabling a wide range of new electronic and optoelectronic applications.
- TLP growth carried out by heating patterned group III element capped by evaporated SiOx in the presence of group V gas
- TLP grown InP films characterized via electron backscatter diffraction spectroscopy (EBSD) to verify single crystallinity
- TLP grown InP transistors show high on/off ratios >105 and field effect mobilities of up to 675 cm2/V s
- Demonstration of InP, GaP, and InSb growth show broad applicability of the TLP growth method to all III-V semiconductors in general