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Growth of GaN with a Low Density of Structural Defects

E.O. Lawrence Berkeley National Laboratory

APPLICATION OF TECHNOLOGY:

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ABSTRACT:

Hexagonal GaN is grown in thin film form on substrates that are not lattice-matched (sapphire, silicon and silicon carbide). Current technology produces epilayers with a high density of dislocation, typically in the 1010/cm2 range. These defects, which act as recombination centers, are detrimental to device performance. Edith Bourret-Courchesne of Berkeley Lab has developed a new process to reduce the density of dislocations by up to three orders of magnitude. Berkeley Lab's average 8x107 dislocations/cm2 is the lowest reported to date for GaN grown without recourse to lateral overgrowth, a multi-step process. Use of the low dislocation density material is expected to increase device performance.

STATUS: U.S. Patent #6,534,332. Available for licensing

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REFERENCE NUMBER: IB-1619

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